Patent · US Active

Layer assembly

US8502197B2 · kind B2 · utility

0Cited by
7References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 11, 2012
Grant dateAug 6, 2013
Priority date
Expiry dateDec 11, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/773
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A device including a locally modified buried first layer. A second layer is arranged on top of the first layer. The first layer includes at least one modified section and at least one unmodified section. The modified material of the locally modified buried first layer changes or induces mechanical strain in a portion of the second layer which is arranged above the at least one modified section. At least one nanostructure is placed on top of the second layer in an area, which is located above the at least one unmodified section of the first layer or adjacent thereto, said at least one nanostructure being formed by a strain-sensitive third material deposited on the locally strained second layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.