Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

US8502246B2 · kind B2 · utility

Assignees

• The Regents of the University of California · US
• Japan Science and Technology Agency · JP

Inventors

• Arpan Chakraborty · Goleta, US
• Benjamin A. Haskell · Lompoc, US
• Stacia Keller · Midland School, US
• James S. Speck · Fremont, US
• Steven P. DenBaars · Goleta, US
• Shuji Nakamura · Goleta, US
• Umesh Mishra · Montecito, US

Key dates

• Filing date: Feb 12, 2009
• Grant date: Aug 6, 2013
• Expiry date: Feb 12, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2304/12
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.