Nano-electro-mechanical system (NEMS) structures with actuatable semiconductor fin on bulk substrates
US8502279B2 · kind B2 · utility
21Cited by
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21Claims
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Key dates
| Filing date | May 16, 2011 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Oct 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Semiconductor devices are formed with a nano-electro-mechanical system (NEMS) logic or memory on a bulk substrate. Embodiments include forming source/drain regions directly on a bulk substrate, forming a fin connecting the source/drain regions, forming two gates, one on each side of the fin, the two gates being insulated from the bulk substrate, and forming a substrate gate in the bulk substrate. The fin is separated from each of the two gates and the substrate gate with an air gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.