Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
US8502282B2 · kind B2 · utility
3Cited by
31References
20Claims
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Key dates
| Filing date | Aug 11, 2011 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Aug 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.