Reliable normally-off III-nitride active device structures, and related methods and systems

US8502323B2 · kind B2 · utility

Assignee

• The Hong Kong University of Science and Technology

Inventor

• Jing Chen · Hong Kong, CN

Key dates

• Filing date: Aug 4, 2008
• Grant date: Aug 6, 2013
• Expiry date: Mar 4, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A field-effect transistor includes a first gate, a second gate held at a substantially fixed potential in a cascode configuration, and a semiconductor channel. The semiconductor channel has an enhancement mode portion and a depletion mode portion. The enhancement mode portion is gated to be turned on and off by the first gate, and has been modified to operate in enhancement mode. The depletion mode portion is gated by the second gate, and has been modified to operate in depletion mode and that is operative to shield the first gate from voltage stress.