Nanoelectric memristor device with dilute magnetic semiconductors
US8502343B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2011 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Nov 17, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nanoelectric memristor device includes a first electrode and a layer of oxygen-vacancy-rich metal oxide deposited upon a surface of the first electrode. A layer of oxygen-rich/stochiometric metal oxide is deposited upon a surface of the oxygen-vacancy-rich metal oxide layer that is opposite from said first electrode. At least one of the oxygen-vacancy-rich metal oxide and oxygen-rich/stochiometric metal oxide layers is doped with one of a magnetic and a paramagnetic material. A second electrode is adjacent to a surface of the oxygen-rich/stochiometric metal oxide layer that is opposite from the oxygen-rich/stochiometric metal oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.