Patent · US Active

MEMS and protection structure thereof

US8502382B2 · kind B2 · utility

0Cited by
5References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 30, 2012
Grant dateAug 6, 2013
Priority date
Expiry dateApr 30, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/1461
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.