Power semiconductor device
US8502385B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2011 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Jul 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device has the power semiconductor elements having back surfaces bonded to wiring patterns and surface electrodes, cylindrical communication parts having bottom surfaces bonded on the surface electrodes of the power semiconductor elements and/or on the wiring patterns, a transfer mold resin having concave parts which expose the upper surfaces of the communication parts and cover the insulating layer, the wiring patterns, and the power semiconductor elements. External terminals have one ends inserted in the upper surfaces of the communication parts and the other ends guided upward, and at least one external terminal has, between both end parts, a bent area which is bent in an L shape and is embedded in the concave part of the transfer mold resin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.