Method of twice programming a non-volatile flash memory with a sequence
US8503233B2 · kind B2 · utility
6Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2010 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Jul 29, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of twice programming a multi-bit per cell non-volatile memory with a sequence is disclosed. At least one page at a given word line is firstly programmed with program data by a controller of the non-volatile memory, and at least one page at a word line preceding the given word line is secondly programmed with the same program data by the controller.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.