Methods of fabricating multilayer substrates
US8505197B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 5, 2010 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | May 17, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a multilayer substrate may include bonding a front face of a donor substrate to a front face of a receiver substrate by molecular adhesion to form a stack and applying a heat treatment to the stack to consolidate a bond interface between the donor substrate and the receiver substrate. The method may further include thinning a back face of the donor substrate, trimming a periphery of the donor substrate and at least a portion of a periphery of the receiver substrate, and etching the back face of the donor substrate, the periphery of the donor substrate, and the at least a portion of the periphery of the receiver substrate subsequent to thinning the back face of the donor substrate and trimming the periphery of the donor substrate and the at least a portion of the periphery of the receiver substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.