Patent · US Active

Printing semiconductor elements by shear-assisted elastomeric stamp transfer

US8506867B2 · kind B2 · utility

306Cited by
34References
29Claims
0Family size

Assignee

Inventor

Key dates

Filing dateNov 19, 2009
Grant dateAug 13, 2013
Priority date
Expiry dateDec 15, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/15788
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Provided are methods and devices for transfer printing of semiconductor elements to a receiving surface. In an aspect, the printing is by conformal contact between an elastomeric stamp inked with the semiconductor elements and a receiving surface, and during stamp removal, a shear offset is applied between the stamp and the receiving surface. The shear-offset printing process achieves high printing transfer yields with good placement accuracy. Process parameter selection during transfer printing, including time varying stamp-backing pressure application and vertical displacement, yields substantially constant delamination rates with attendant transfer printing improvement.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.