Patterned implant of a dielectric layer
US8507298B2 · kind B2 · utility
4Cited by
10References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 2, 2011 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Mar 8, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At least part of a dielectric layer is implanted to form implanted regions. The implanted regions affect the etch rate of the dielectric layer during the formation of the openings through the dielectric layer. Metal contacts may be formed within these openings. The dielectric layer, which may be SiO2 or other materials, may be part of a solar cell or other device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.