Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate
US8507305B2 · kind B2 · utility
2Cited by
4References
16Claims
0Family size
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Key dates
| Filing date | Apr 10, 2012 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Apr 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2201
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which includes a hexagonal III-nitride semiconductor and a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.