Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

US8507335B2 · kind B2 · utility

Assignee

• POWER INTEGRATIONS, INC. · US

Inventors

• Igor Sankin · Starkville, US
• David C. Sheridan · Williston, US
• Joseph Neil Merrett · Starkville, US

Key dates

• Filing date: May 16, 2011
• Grant date: Aug 13, 2013
• Expiry date: Nov 3, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

Semiconductor devices are described wherein current flow in the device is confined between the rectifying junctions (e.g., p-n junctions or metal-semiconductor junctions). The device provides non-punch-through behavior and enhanced current conduction capability. The devices can be power semiconductor devices as such as Junction Field-Effect Transistors (VJFETs), Static Induction Transistors (SITs), Junction Field Effect Thyristors, or JFET current limiters. The devices can be made in wide bandgap semiconductors such as silicon carbide (SiC). According to some embodiments, the device can be a normally-off SiC vertical junction field effect transistor. Methods of making the devices and circuits comprising the devices are also described.