Methods of removing noble metal-containing nanoparticles
US8507387B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2012 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | May 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include methods of removing noble metal-containing particles from over a substrate. The substrate is exposed to a composition that reduces adhesion between the noble metal-containing particles and the substrate, and simultaneously the substrate is spun to sweep at least some of the noble metal-containing particles off from the substrate. Some embodiments include methods in which tunnel dielectric material is formed across a semiconductor wafer. Metallic nanoparticles are formed across the tunnel dielectric material. A stack of two or more different materials is formed over the metallic nanoparticles. A portion of the stack is covered with a protective mask while another portion of the stack is left unprotected. The unprotected portion of the stack is removed to expose some of the metallic nanoparticles. The semiconductor wafer to is subjected to etchant suitable to undercut at least some of the exposed metallic nanoparticles, and simultaneously the semiconductor wafer is spun.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.