Methods for forming dielectric layers

US8507389B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Lucien Date · Ottignies, BE
• Paul William Turnbull · Morpeth, GB

Key dates

• Filing date: Jul 14, 2010
• Grant date: Aug 13, 2013
• Expiry date: Apr 30, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods for forming a dielectric layer on a substrate are provided herein. In some embodiments a method for forming a dielectric layer on a substrate may include exposing the substrate to a first source gas comprising a silicon precursor and an oxidizer for a first period of time to form a first layer comprising silicon and oxygen; and exposing the substrate to a second source gas comprising a metal precursor and the silicon precursor for a second period of time to form a second layer comprising silicon and a metal, where in the first layer and the second layer form the dielectric layer.