Method of fabricating polysilicon, thin film transistor, method of fabricating the thin film transistor, and organic light emitting diode display device including the thin film transistor
US8507914B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2009 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Jul 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device equipped with the thin film transistor of which the thin film transistor includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer and a second semiconductor layer disposed on the buffer layer, a gate electrode insulated from the first semiconductor layer and the second semiconductor layer, a gate insulating layer insulating the gate electrode from the first semiconductor layer and the second semiconductor layer, and source and drain electrodes insulated from the gate electrode and partially connected to the second semiconductor layer, wherein the second semiconductor layer is disposed on the first semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.