Nonvolatile semiconductor memory device
US8507972B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2010 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Mar 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a stacked structural unit, a semiconductor pillar, a memory layer, an inner insulating film, an outer insulating film and a cap insulating film. The unit includes a plurality of electrode films stacked alternately in a first direction with a plurality of inter-electrode insulating films. The pillar pierces the stacked structural unit in the first direction. The memory layer is provided between the electrode films and the semiconductor pillar. The inner insulating film is provided between the memory layer and the semiconductor pillar. The outer insulating film is provided between the memory layer and the electrode films. The cap insulating film is provided between the outer insulating film and the electrode films, and the cap insulating film has a higher relative dielectric constant than the outer insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.