Semiconductor integrated circuit with metal gate
US8507979B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2012 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Jul 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
Abstract
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a semiconductor substrate and forming a gate trench therein. The method also includes filling in the gate trench partially with a work-function (WF) metal stack, and filling in the remaining gate trench with a dummy-filling-material (DFM) over the WF metal stack. A sub-gate trench is formed by etching-back the WF metal stack in the gate trench, and is filled with an insulator cap to form an isolation region in the gate trench. The DFM is fully removed to from a MG-center trench (MGCT) in the gate trench, which is filled with a fill metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.