Phase-change memory device and method of fabricating the same
US8508021B2 · kind B2 · utility
1Cited by
1References
8Claims
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Key dates
| Filing date | Dec 7, 2010 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Aug 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A phase-change memory device with improved deposition characteristic and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate having a phase-change area, a first material-rich first phase-change layer forming an inner surface of the phase-change area and comprised of a hetero compound of the first material and a second material, and a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.