Patent · US Active

Method for producing an integrated circuit and resulting film chip

US8508038B2 · kind B2 · utility

1Cited by

3References

7Claims

0Family size

Assignee

Institut für Mikroelektronik Stuttgart · DE

Inventors

Joachim Norbert Burghartz · Shrub Oak, US
Christine Harendt · Rochlitz, DE

Key dates

Filing date	Jan 5, 2012
Grant date	Aug 13, 2013
Priority date	—
Expiry date	Jan 5, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/19043
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor substrate having a first lateral dimension is combined with a flexible film piece having a second lateral dimension by arranging the semiconductor substrate in a recess of the film piece. The semiconductor substrate has circuit structures produced using lithography process steps. After the semiconductor substrate has been arranged in the recess of the film piece, a patterned layer of an electrically conductive material is produced above the semiconductor substrate and the film piece using lithography process steps. The patterned layer extends from the semiconductor substrate up to the flexible film piece and forms a number of electrically conductive contact tracks between the semiconductor substrate and the film piece.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.