Ferroelectric memory with shunt device
US8508974B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2011 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Feb 9, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/2275
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory device includes a shunt switch configured to short both sides of the ferroelectric capacitor of the ferroelectric memory device. The shunt switch is configured therefore to remove excess charge from around the ferroelectric capacitor prior to or after reading data from the ferroelectric capacitor. By one approach, the shunt switch is connected to operate in reaction to signals from the same line that controls accessing the ferroelectric capacitor. So configured, the high performance cycle time of the ferroelectric memory device is reduced by eliminating delays used to otherwise drain excess charge from around the ferroelectric capacitor, for example by applying a precharge voltage. The shunt switch also improves reliability of the ferroelectric memory device by ensuring that excess charge does not affect the reading of the ferroelectric capacitor during a read cycle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.