Light emitting and lasing semiconductor methods and devices
US8509274B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 16, 2010 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Sep 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1835
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.