Method of forming a photomask layout using optical proximity correction to compensate for a three-dimensional mask effect
US8510684B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2011 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Dec 15, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/398
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a layout of a photomask includes receiving a layout of a mask pattern, obtaining image parameters of a two-dimensional (2D) layout mask from a simulation, obtaining image parameters of a three-dimensional (3D) layout mask from a simulation, and obtaining differences between the image parameters of the 2D and 3D masks. The differences between the image parameters of the 2D and 3D masks can be compensated by convolving a probability function with respect to an open area, represented by a visible kernel function, with a mask function to produce a first function, convolving a probability function with respect to a blocked area, represented by a visible kernel function, with the mask function to produce a second function, and summing the first function and the second function to produce a compensated vector. The layout of the mask pattern can be corrected using the compensated vector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.