Plasma processing method and apparatus
US8512510B2 · kind B2 · utility
3Cited by
12References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 2011 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Jun 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.