Forming semiconductor structures
US8513111B2 · kind B2 · utility
0Cited by
8References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2006 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Nov 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.