Patent · US Active

Manufacturing a microelectronic device comprising silicon and germanium nanowires integrated on a same substrate

US8513125B2 · kind B2 · utility

18Cited by

6References

15Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Emeline SARACCO · Limoges, FR
Jean-Francois Damlencourt · Laval, FR
Michel Heitzmann · Combs-la-Ville, FR

Key dates

Filing date	Aug 30, 2010
Grant date	Aug 20, 2013
Priority date	—
Expiry date	May 10, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A method for manufacturing a device comprising a structure with nanowires based on a semiconducting material such as Si and another structure with nanowires based on another semiconducting material such as SiGe, and is notably applied to the manufacturing of transistors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.