Patent · US Active

Chemical mechanical planarization processes for fabrication of FinFET devices

US8513127B2 · kind B2 · utility

9Cited by

36References

20Claims

0Family size

Assignees

International Business Machines Corporation · US
JSR CORPORATION · JP

Inventors

Josephine B. Chang · Mahopac, US
Leslie M. Charns · Portland, US
Jason E. Cummings · Smithfield, US
Michael A. Guillorn · Locke, US
Lukasz J. Hupka · Salt Lake City, US
Dinesh R. Koli · Tarrytown, US
Tomohisa Konno · Tokyo, JP
Mahadevaiyer Krishnan · Hopewell Junction, US
Michael F. Lofaro · Milton, US
Jakub W. Nalaskowski · Aurora, US
Masahiro Noda · Yokohama, JP
Dinesh Kumar Penigalapati · Guilderland, US
Tatsuya Yamanaka · Somalomo, CM

Key dates

Filing date	Jan 25, 2011
Grant date	Aug 20, 2013
Priority date	—
Expiry date	Oct 30, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/691
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A planarization method includes planarizing a semiconductor wafer in a first chemical mechanical polish step to remove overburden and planarize a top layer leaving a thickness of top layer material over underlying layers. The top layer material is planarized in a second chemical mechanical polish step to further remove the top layer and expose underlying layers of a second material and a third material such that a selectivity of the top layer material to the second material to the third material is between about 1:1:1 to about 2:1:1 to provide a planar topography.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.