Plasma processing apparatus and plasma processing method
US8513137B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Sep 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality0.7×n/4≦D≦1.3×n/4 (n being a natural number).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.