Semiconductor device including a phase-change memory element
US8513638B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2011 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Nov 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A semiconductor device may include, but is not limited to: a first insulating film; a second insulating film over the first insulating film; a first memory structure between the first and second insulating films; and a third insulating film between the first and second insulating films. The first memory structure may include, but is not limited to: a heater electrode; and a phase-change memory element between the heater electrode and the second insulating film. The phase-change memory element contacts the heater electrode. The third insulating film covers at least a side surface of the phase-change memory element. Empty space is positioned adjacent to at least one of the heater electrode and the third insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.