Heterojunction bipolar transistors with reduced base resistance

US8513706B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Erik M. Dahlstrom · Santa Clara, US
• Peter B. Gray · Jericho, US
• Qizhi Liu · South Burlington, US

Key dates

• Filing date: Nov 8, 2012
• Grant date: Aug 20, 2013
• Expiry date: Nov 8, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/021

Abstract

Heterojunction bipolar transistors with reduced base resistance, as well as fabrication methods for heterojunction bipolar transistors and design structures for BiCMOS integrated circuits. The heterojunction bipolar transistor includes a conductive layer between the intrinsic base and the extrinsic base. The conductive layer is comprised of a conductive material, such as a silicide, having a lower resistivity than the materials forming the intrinsic base and the extrinsic base.