Three-layer magnetic element, magnetic field sensor, magnetic memory and magnetic logic gate using such an element
US8513944B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 13, 2010 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Jul 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3218
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A three-layer magnetic element comprises, on a substrate, a first oxide, hydride or nitride layer O having a metal magnetic layer M mounted thereon, the latter having either a second oxide, hydride or nitride layer O′, or a non-ferromagnetic metal layer M′ mounted thereon. Layer M is continuous, has a thickness of 1 to 5 nm and the magnetization thereof is parallel to the layer plane in the absence of layers O and O′. There is, for a range of temperature equal to or greater than ambient temperature, interfacial magnetic anisotropy perpendicular to the layer plane on interfaces O/M and M/O′ that is capable of decreasing the effective demagnetizing field of layer M or orienting the magnetization of layer M in a manner substantially perpendicular to the layer plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.