Patent · US Active

Probes formed from semiconductor region vias

US8513966B2 · kind B2 · utility

2Cited by

5References

10Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Qing Ma · Saratoga, US
Roy E. Swart · Hillsboro, US
Paul B. Fischer · Portland, US
Johanna M. Swan · Scottsdale, US

Key dates

Filing date	Aug 11, 2010
Grant date	Aug 20, 2013
Priority date	—
Expiry date	Aug 14, 2031

Classification

Technology area (CPC G)Physics
CPC primaryG01R3/00
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Embodiments of the invention describe forming a set of probes using semiconductor regions each including a plurality of vias. A first set of probe segments may be formed from a first set of vias on a first semiconductor region. A second set of probe segments may be formed from a second set of vias on a second semiconductor region and bonded to the first set of probe segments. At least one spring comprising a dielectric material may be formed to couple the first set of probe segments, while a set of metal tips disposed on the second set of probe segments.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.