Magnetic random access memory cell with improved dispersion of the switching field
US8514618B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2012 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Jul 10, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1659
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure concerns a magnetic random access memory MRAM cell comprising a tunnel magnetic junction formed from a first ferromagnetic layer, a second ferromagnetic layer having a second magnetization that can be oriented relative to an anisotropy axis of the second ferromagnetic layer at a predetermined high temperature threshold, and a tunnel barrier; a first current line extending along a first direction and in communication with the magnetic tunnel junction; the first current line being configured to provide an magnetic field for orienting the second magnetization when carrying a field current; wherein the MRAM cell is configured with respect to the first current line such that when providing the magnetic field, at least a component of the magnetic field is substantially perpendicular to said anisotropy axis. The MRAM cell has an improved switching efficiency, lower power consumption and improved dispersion of the switching field compared to conventional MRAM cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.