Plasma etching method capable of detecting end point and plasma etching device therefor
US8518283B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2007 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Oct 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a plasma etching method in which a special area for detecting an end point needs not to be set and an equipment therefor. At an etching step of forming SF6 gas into plasma to etch an etching ground on a Si film, the step is configured by two steps of: a large-amount supply step of supplying a large amount of SF6 gas; and a small-amount supply step of supplying a small amount of SF6 gas. An end-point detecting processor 34 measures an emission intensity of Si or SiFx in the plasma at the small-amount supply step, and determines that an etching end point is reached when the measured emission intensity becomes equal to or less than a previously set reference value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.