Method to form a device by constructing a support element on a thin semiconductor lamina

US8518724B2 · kind B2 · utility

Assignee

• GTAT Corporation · US

Inventors

• Christopher J. Petti · Mountain View, US
• Mohamed M. Hilali · San Ramon, US
• Theodore H. Smick · Essex, US
• Venkatesan Murali · San Jose, US
• Kathy J. Jackson · Cupertino, US
• Zhiyong Li · Foster City, US
• Gopalakrishna B. Prabhu · San Jose, US

Key dates

• Filing date: Apr 18, 2012
• Grant date: Aug 27, 2013
• Expiry date: Apr 18, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved.Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.