Semiconductor structure having a through substrate via (TSV) and method for forming
US8518764B2 · kind B2 · utility
16Cited by
2References
14Claims
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Key dates
| Filing date | Oct 24, 2011 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Oct 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure includes a substrate having a background doping of a first concentration and of a first conductivity type. A through substrate via (TSV) is through the substrate. A device has a first doped region of a second conductivity on a first side of the substrate. A second doped region is around the TSV. The second doped region has a doping of a second concentration greater than the first concentration and is of the first conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.