Semiconductor device and method of manufacturing the same
US8518769B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2012 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Mar 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A semiconductor device of an embodiment includes: an insulating film including: a first region extending in a first direction; second and third regions arranged at a distance from each other; and fourth and fifth regions each having a concave shape, the fourth and fifth regions each having a smaller film thickness than a film thickness of each of the first through third regions; a semiconductor layer formed in a direction from the fourth region toward the fifth region, the semiconductor layer having a smaller width than a width of each of source and drain regions, the semiconductor layer being connected to the source and drain regions; a gate electrode placed on the opposite side of a gate insulating film from the semiconductor layer on the first region; and a gate sidewall formed on a side face of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.