Semiconductor devices and methods of forming thereof

US8518794B2 · kind B2 · utility

Assignee

• KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY · KR

Inventors

• Hokyun Ahn · Daejeon, KR
• Jong-Won Lim · Daejeon, KR
• Hyung Sup Yoon · Daejeon, KR
• Woojin Chang · Daejeon, KR
• Hae Cheon Kim · Daejeon, KR

Key dates

• Filing date: Sep 1, 2010
• Grant date: Aug 27, 2013
• Expiry date: Jan 25, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/411

Abstract

Provided is a semiconductor device. The semiconductor device includes: a substrate; an active layer on the substrate; a capping layer on the active layer; source/drain electrodes on the capping layer; a gate electrode on the active layer; and a first void region on a first sidewall of the gate electrode and a second void region on a second sidewall facing the first sidewall.