Patent · US Active

Semiconductor structure and method for making same

US8518798B2 · kind B2 · utility

0Cited by

1References

35Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventor

Eric Graetz · Klagenfurt, AT

Key dates

Filing date	Sep 23, 2010
Grant date	Aug 27, 2013
Priority date	—
Expiry date	Jan 20, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76256
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

One or more embodiments relate to a method for forming a semiconductor structure, including: forming a semiconductor layer; and forming a dielectric layer over a back side of said semiconductor layer. In one or more embodiments, the dielectric layer may be a silicone rubber layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.