Semiconductor device contact structures and methods for making the same
US8518819B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2011 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Oct 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor contact structure and method provide contact structures that extend through a dielectric material and provide contact to multiple different subjacent materials including a silicide material and a non-silicide material such as doped silicon. The contact structures includes a lower composite layer formed using a multi-step ionized metal plasma (IMP) deposition operation. A lower IMP film is formed at a high AC bias power followed by the formation of an upper IMP film at a lower AC bias power. The composite layer may be formed of titanium. A further layer is formed as a liner over the composite layer and the liner layer may advantageously be formed using CVD and may be TiN. A conductive plug material such as tungsten or copper fills the contact openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.