Optoelectronic device and method for manufacturing the same
US8519430B2 · kind B2 · utility
13Cited by
1References
20Claims
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Key dates
| Filing date | Sep 2, 2011 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Nov 14, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.