Method for making a heterojunction bipolar transistor

US8519443B2 · kind B2 · utility

Assignees

• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR
• S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES · FR

Inventors

• Jean-Luc Pelouard · Paris, FR
• Melania Lijadi · Fontenay-aux-Roses, FR
• Christophe Dupuis · Sola, NO
• Fabrice Pardo · Vitry-sur-Seine, FR
• Philippe Bove · Gif-sur-Yvette, FR

Key dates

• Filing date: Jul 18, 2006
• Grant date: Aug 27, 2013
• Expiry date: Mar 6, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/852

Abstract

The invention concerns a heterojunction bipolar transistor comprising a support, and epitaxially grown from said support, at least: one collecting, respectively emitting, layer; at least one base layer; and at least one emitting, respectively collecting, layer. The collecting, respectively emitting, layer comprises: at least one first undercoat contacted with said base layer, substantially of similar composition as said emitting, respectively collecting, layer; and at least one second undercoat on the side opposite said base layer relative to said first undercoat.