Semiconductor device and method of forming the same
US8519472B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2010 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Feb 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
Abstract
A semiconductor device includes stacked-gate structures including a plurality of cell gate patterns and insulating patterns alternately stacked on a semiconductor substrate and extending in a first direction. Active patterns and gate dielectric patterns are disposed in the stacked-gate structures. The active patterns penetrate the stacked-gate structures and are spaced apart from each other in a second direction intersecting the first direction, and the gate dielectric patterns are interposed between the cell gate patterns and the active patterns and extend onto upper and lower surfaces of the cell gate patterns. The active patterns share the cell gate patterns in the stacked-gate structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.