Semiconductor device
US8519475B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2011 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Nov 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/512
Abstract
A semiconductor device includes a first insulating film formed between a gate electrode and a first flat semiconductor layer, and a sidewall-shaped second insulating film formed to surround an upper sidewall of a first columnar silicon layer while contacting an upper surface of the gate electrode and to surround a sidewall of the gate electrode and the first insulating film. The semiconductor device further includes a metal-semiconductor compound formed on each of an upper surface of a first semiconductor layer of the second conductive type formed in the entirety or the upper portion of the first flat semiconductor layer, and an upper surface of the second semiconductor layer of the second conductive type formed in the upper portion of the first columnar semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.