Technique for the growth of planar semi-polar gallium nitride
US8524012B2 · kind B2 · utility
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Key dates
| Filing date | Jan 24, 2012 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Mar 3, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {1011} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {1013} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {1122} gallium nitride (GaN) grown on a {1100} sapphire substrate, and (4) {1013} gallium nitride (GaN) grown on a {1100} sapphire substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.