Method for repairing copper diffusion barrier layers on a semiconductor solid substrate and repair kit for implementing this method
US8524512B2 · kind B2 · utility
1Cited by
7References
31Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 7, 2009 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Apr 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method for repairing copper diffusion barrier layers on a semiconductor solid substrate and repair kit for implementing this method.One subject of the present invention is a method for repairing a surface of a substrate coated with a discontinuous copper diffusion barrier layer of a titanium-based material.According to the invention, this method comprises:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.