Methods of processing units comprising crystalline materials, and methods of forming semiconductor-on-insulator constructions
US8524572B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2011 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Feb 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include methods of processing a unit containing crystalline material. A damage region may be formed within the crystalline material, and a portion of the unit may be above the damage region. A chuck may be used to bend the unit and thereby induce cleavage along the damage region to form a structure from the portion of the unit above the damage region. Some embodiments include methods of forming semiconductor-on-insulator constructions. A unit may be formed to have dielectric material over monocrystalline semiconductor material. A damage region may be formed within the monocrystalline semiconductor material, and a portion of the monocrystalline semiconductor material may be between the damage region and the dielectric material. The unit may be incorporated into an assembly with a handle component, and a chuck may be used to contort the assembly and thereby induce cleavage along the damage region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.