Chemical mechanical planarization with overburden mask

US8524606B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• JSR CORPORATION · JP

Inventors

• Leslie M. Charns · Portland, US
• John M. Cotte · New Fairfield, US
• Jason E. Cummings · Smithfield, US
• Lukasz J. Hupka · Salt Lake City, US
• Dinesh R. Koli · Tarrytown, US
• Tomohisa Konno · Tokyo, JP
• Mahadevaiyer Krishnan · Hopewell Junction, US
• Michael F. Lofaro · Milton, US
• Jakub W. Nalaskowski · Aurora, US
• Masahiro Noda · Yokohama, JP
• Dinesh Kumar Penigalapati · Guilderland, US
• Tatsuya Yamanaka · Somalomo, CM

Key dates

• Filing date: Jan 25, 2011
• Grant date: Sep 3, 2013
• Expiry date: Oct 16, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Planarization methods include depositing a mask material on top of an overburden layer on a semiconductor wafer. The mask material is planarized to remove the mask material from up areas of the overburden layer to expose the overburden layer without removing the mask material from down areas. The exposed overburden layer is wet etched and leaves a thickness remaining over an underlying layer. Remaining portions of the mask layer and the exposed portions of the overburden layer are planarized to expose the underlying layer.