Image sensor with raised photosensitive elements
US8525241B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 16, 2012 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | May 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/809
Abstract
An image sensor having a pixel array comprises periphery elements formed over a substrate, an oxide layer formed over the periphery elements, an epitaxial layer formed in an opening in the oxide layer in a pixel array area, and a plurality of photosensitive elements of the pixel array formed in the epitaxial layer. Formation of an initial metallization layer occurs after the formation of the photosensitive elements in the epitaxial layer. The photosensitive elements can thus be formed in the epitaxial layer at a higher level within an image sensor stack than that of the initial metallization layer. This advantageously allows stack height and pixel size to be reduced, and fill factor to be increased. The image sensor may be implemented in a digital camera or other type of digital imaging device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.